Special
Joint Seminar
IEEE Sweden Electron Devices Chapter and Kondenserade
Materiens Fysik -KTH
Prof. Bruce Wessels
Materials Research Center, Northwestern
University, Evanston IL
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Tid: Torsdag den 19 Maj 2005 kl 11:00 (precis) -
12.00
Plats: Conference Room 3408, tr4, hiss B, KTH-Electrum 229, Kista
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ABSTRACT
Thin film electro-optic (EO) modulators for optical communications and electro-optic systems are being developed. The modulators use ferroelectric BaTiO3 thin films as the active waveguide material. Epitaxial BaTiO3 is deposited by metal-organic chemical vapor deposition. Strip-loaded modulators with electro-optic coefficients as high as 430 pm/V have been demonstrated, which is 13 times higher than that of LiNbO3, the currently preferred material for wide bandwidth applications. We have demonstrated modulation out to 40 GHz. Furthermore using this thin film technology potentially enables modulation out to 100 GHz and beyond. The thin film electro-optic devices can be integrated using a silicon platform. Other advantages include small footprint, low operating voltage and operation over the spectral range of 0.4 to 7 microns.
Contact persons:
Alex Grishin 08-790 4176
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